MKP3V120(2000) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MKP3V120
(Rev.:2000)

Sidac High Voltage

ON Semiconductor 

MKP3V120, MKP3V240

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Lead

(Lead Length = 3/8″)

w Lead Solder Temperature

(Lead Length 1/16″ from Case, 10 s Max)

Symbol

Max

RθJL

15

TL

260

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Repetitive Peak Off–State Current

(50 to 60 Hz Sine Wave)

VDRM = 90 V

VDRM = 180 V

ON CHARACTERISTICS

MKP3V120

MKP3V240

IDRM

—

—

Breakover Voltage, IBO = 200 µA

MKP3V120

MKP3V240

VBO

110

—

220

—

Breakover Current

Peak On–State Voltage

(ITM = 1 A Peak, Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%)

Dynamic Holding Current

(Sine Wave, 60 Hz, RL = 100 Ω)

Switching Resistance

(Sine Wave, 50 to 60 Hz)

IBO

VTM

IH

RS

—

—

—

1.1

—

—

0.1

—

DYNAMIC CHARACTERISTICS

Critical Rate–of–Rise of On–State Current,

Critical Damped Waveform Circuit

(IPK = 130 Amps, Pulse Width = 10 µsec)

di/dt

—

120

Unit

°C/W

°C

Max

Unit

10

µA

Volts

130

250

200

µA

1.5

Volts

100

mA

—

kΩ

—

A/µs

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