MJL21193 Ver la hoja de datos (PDF) - Inchange Semiconductor

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MJL21193

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

MJL21193

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA; IB=B 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A ;IB=B -0.8A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A ;IB=-3.2A

VBE(on) Base-Emitter On Voltage

IC=-8A ; VCE=-5V

ICEO

Collector Cutoff Current

VCE=-200V,IB=0

ICEX

Collector Cutoff Current

VCE= -250V; VBE(off)= -1.5V

IEBO

Emitter Cutoff Current

VEB=-5V; IC=0

hFE-1

DC Current Gain

IC=-8A; VCE=-5V

hFE-2

DC Current Gain

IC=-16A; VCE=-5V

COB

Collector Capacitance

IE= 0; f=1MHz ; VCB=-10V

fT

Current Gain-Bandwidth Product

IC=-1A ;VCE=-10V; ftest=1MHz

MIN TYP. MAX UNIT

-250

V

-1.4 V

-4

V

-2.2 V

-0.1 mA

-0.1 mA

-1 μA

25

75

8

500 pF

4

MHz

isc Website：www.iscsemi.cn

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