MJL1302 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJL1302 Datasheet PDF : 5 Pages
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10
TJ = 25°C
1.0
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
10
TJ = 25°C
NPN MJL3281A
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
1.0
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Typical Base−Emitter Voltage
10000
PNP MJL1302A
Cib
10000
NPN MJL3281A
Cib
1000
Cob
1000
Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. MJL3281A Typical Capacitance
100
10
1.0
0.1
1.0
10 ms
50 ms
1 sec
250 ms
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150°C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
Figure 11. Active Region Safe Operating Area
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