MJL1302 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJL1302

Complementary Bipolar Power Transistors

ON Semiconductor 

MJL3281A (NPN) MJL1302A (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 260 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

VCEO(sus)

260

ICBO

−

IEBO

−

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non−repetitive)

(VCE = 100 Vdc, t = 1 s (non−repetitive)

ON CHARACTERISTICS

IS/b

4

1

DC Current Gain

(IC = 500 mAdc, VCE = 5 Vdc)

(IC = 1 Adc, VCE = 5 Vdc)

(IC = 3 Adc, VCE = 5 Vdc)

(IC = 5 Adc, VCE = 5 Vdc)

(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 1 Adc)

hFE

75

75

75

75

45

VCE(sat)

−

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

fT

30

Cob

−

Max

Unit

Vdc

−

μAdc

50

μAdc

5

Adc

−

−

150

150

150

150

−

Vdc

3

MHz

−

pF

600

http://onsemi.com

2

Share Link: