MJF18002 Ver la hoja de datos (PDF) - Inchange Semiconductor
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MJF18002 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18002
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH
450
VCEsat-1
VCEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=0.4A ;IB=40mA
TC=125℃
IC=1A ;IB=0.2A
TC=125℃
VBEsat-1 Base-emitter saturation voltage
IC=0.4A ;IB=40mA
VBEsat-2 Base-emitter saturation voltage
IC=1A ;IB=0.2A
ICES
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125℃
V
0.5
0.5
V
0.5
0.6
V
1.1
V
1.25
V
0.1
0.5
mA
0.1
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
DC current gain
VEB=9V; IC=0
IC=0.2A ; VCE=5V
IC=0.4A ; VCE=1V
0.1
mA
14
34
11
hFE-3
DC current gain
IC=1A ; VCE=1V
6
hFE-4
DC current gain
IC=10mA ; VCE=5V
10
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
6.5
MHz
COB
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
35
pF
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=0.4A
IB1=40mA; IB2=0.2A
200 300
ns
1.2
2.5
μs
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=1.0A
IB1=0.2A; IB2=0.5A
85
150
ns
1.7
2.5
μs
2
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