MJE4343 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJE4343

High-Voltage - High Power Transistors

ON Semiconductor 

MJE4343 (NPN), MJE4353 (PNP)

VCC

+ 30 V

3.0

2.0

25 ms

+11 V

RB

0

RC

SCOPE

1.0

0.7

0.5

TJ = 25°C

IC/IB = 10

VCE = 30 V

tr

- 9.0 V

51

D1

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

- 4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

 D1 MUST BE FAST RECOVERY TYPE, e.g.:

  1N5825 USED ABOVE IB ≈ 100 mA

  MSD6100 USED BELOW IB ≈ 100 mA

Note: Reverse polarities to test PNP devices.

0.3

0.2

0.1

0.07

td @ VBE(off) = 5.0 V

0.05

0.03

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Typical Turn−On Time

TYPICAL CHARACTERISTICS

5.0

TJ = 25°C

3.0

IC/IB = 10

ts

IB1 = IB2

VCE = 30 V

2.0

1.0

tf

0.7

0.5

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMP)

Figure 4. Turn−Off Time

2.0

TJ = 25°C

1.6

1.2

0.8 VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

0.4

VCE(sat) @ IC/IB = 10

0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20

IC, COLLECTOR CURRENT (AMP)

Figure 5. On Voltages

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4

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