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componentes Descripción

Fabricante

MJE4343

High-Voltage - High Power Transistors

ON Semiconductor 

MJE4343 (NPN),

MJE4353 (PNP)

High-Voltage - High Power

Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

Features

• High Collector−Emitter Sustaining Voltage −

NPN PNP

VCEO(sus) = 160 Vdc − MJE4343 MJE4353

• High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ)

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 8.0 Adc

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating

Symbol

Max

Collector−Emitter Voltage

VCEO

160

Collector−Base Voltage

VCB

160

Emitter−Base Voltage

VEB

7.0

Collector Current −

Continuous

IC

16

Peak (Note 1)

20

Base Current − Continuous

IB

5.0

Total Power Dissipation @ TC

PD

125

= 25°C

Operating and Storage Junc-

tion

Temperature Range

TJ, Tstg

– 65 to + 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction

RqJC

1.0

to Case

1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%.

Unit

Vdc

Vdc

Vdc

Adc

Adc

Watts

°C

Unit

°C/W

http://onsemi.com

16 AMPS

POWER TRANSISTORS

COMPLEMENTARY

SILICON

160 VOLTS

4

1

2

3

SOT−93

CASE 340D

STYLE 1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2012

1

May, 2012 − Rev. 5

Publication Order Number:

MJE4343/D

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