MJE4343(2006) Ver la hoja de datos (PDF) - ON Semiconductor
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MJE4343 Datasheet PDF : 7 Pages
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ON Semiconductort
High−Voltage Ċ High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector−Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ)
• Low Collector−Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak (1)
VCEO
160
VCB
160
VEB
7.0
IC
16
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
IB
PD
TJ, Tstg
5.0
125
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
RθJC
1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
_C
Unit
_C/W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
1
NPN
MJE4343
PNP
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
CASE 340D−02
TO−218 TYPE
Publication Order Number:
MJE4343/D
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