MJE13002 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJE13002 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
DESCRIPTION
·
·With TO-126 package
·High voltage ,high speed
APPLICATIONS
·Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25℃)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
300
9
1.5
3
UNIT
V
V
V
A
A
IB
Base current
0.75
A
IBM
Base current-Peak
1.5
A
IE
Emitter current
2.25
A
IEM
Emitter current-Peak
4.5
A
PD
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
3.12
UNIT
℃/W
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