MJD44H11 Ver la hoja de datos (PDF) - Motorola => Freescale
Número de pieza
componentes Descripción
Fabricante
MJD44H11 Datasheet PDF : 6 Pages
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1
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
MJD44H11 MJD45H11
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
2 3 5 10 20 30 50
t, TIME (ms)
Figure 1. Thermal Response
100 200 300 500 1 k
20
10
5
3
2
1
0.5
0.3
0.1
0.05
0.02
1
500 µs 100 µs
dc 5 ms
1 ms
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
3 5 7 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 1. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
TA TC
2.5 25
2 20
TC
1.5 15
1 10
0.5 5
TA
SURFACE
MOUNT
00
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 3. Power Derating
Motorola Bipolar Power Transistor Device Data
3
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