MJD210 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MJD210

Complementary Plastic Power Transistors

ON Semiconductor 

1

0.7

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.05

0.1

0.07

0.05

0.02

0.01

0.03

0 (SINGLE PULSE)

0.02

0.01

0.02

0.05

0.1

MJD200 (NPN) MJD210 (PNP)

RqJC(t) = r(t) qJC

RqJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0.5

1

2

5

10

20

t, TIME (ms)

50

100

200

Figure 8. Thermal Response

10

5 ms

5

3

2

TJ = 150°C

100 ms

1 ms

1

500 ms

dc

0.1

0.01

0.3

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

1

2 3 5 7 10

20 30

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 9. Active Region Safe Operating Area

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. TJ(pk) may be calculated from the data in

Figure 8. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

200

TJ = 25°C

Cib

100

70

50

Cob

30

MJD200 (NPN)

MJD210 (PNP)

20

0.4 0.6 1

2

4 6 10

20

40

VR, REVERSE VOLTAGE (V)

Figure 10. Capacitance

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