MJD200(2001) Ver la hoja de datos (PDF) - ON Semiconductor
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MJD200 Datasheet PDF : 8 Pages
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ON Semiconductort
Complementary
Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier
applications.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain —
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current–Gain — Bandwidth Product —
fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage —
ICBO = 100 nAdc @ Rated VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TA = 25_C*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
Symbol
VCB
VCEO
VEB
IC
IB
PD
PD
TJ, Tstg
Value
40
25
8
5
10
1
12.5
0.1
1.4
0.011
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
NPN
MJD200
PNP
MJD210
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS
12.5 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 4
inches
mm
Publication Order Number:
MJD200/D
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