MJD112(1997) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
MJD112 Datasheet PDF : 6 Pages
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MJD112/MJD117
THERMAL DATA
Rthj-ca se Thermal Resistance Ju nction-case
Rthj-amb Thermal Resistance Ju nction-amb ient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO Collecto r Cu t-of f
Current (IE = 0)
VCB = 100 V
VCB = 80 V
ICEO Collecto r Cu t-of f
Current (IB = 0)
ICEX Collecto r Cu t-of f
Current
VCE = 50 V
VCB = 80 V VBE = -1.5V
VCB = 80 V VBE = -1.5V Tc = 125 oC
IEBO
VCEO(sus)
Emitter Cut-off Current
(IC = 0)
Collecto r-Emitter
Sustaining Voltage
VEB = 5 V
IC = 30 mA
VCE(sat)∗ Collecto r-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
IB = 8 mA
IB = 40 mA
VBE( sat)∗ Collecto r-Base
Saturation Voltage
IC = 4 A
IB = 40 mA
VBE(on)∗ Base-Emitter Volta ge IC = 2 A
VCE = 3 V
hFE∗ DC Current Gain
IC = 0.5 A
IC = 2 A
IC = 4 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
VCE = 3 V
VCE = 3 V
VCE = 3 V
Min.
100
500
100 0
200
Typ.
Max.
0.02
0.01
0.02
Unit
mA
mA
mA
0.01 mA
0. 5 mA
2
mA
V
2
V
3
V
4
V
2. 8
V
120 00
Safe Operating Areas
Derating Curve
2/6
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