MJD112(2004) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MJD112 Datasheet PDF : 8 Pages
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NPN MJD112
6k
TJ = 125°C
4k
3k
2k
25°C
MJD112 (NPN) MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD117
6k
VCE = 3 V
4k
3k
2k
TC = 125°C
25°C
VCE = 3 V
1k
800
−55 °C
600
1k
800
−55 °C
600
400
400
300
300
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
3.4
3 IC =
0.5 A
2.6
2.2
1.8
1.4
1
0.6
0.1 0.2
1A 2A
TJ = 125°C
4A
3.4
3
IC = 1 A
2A
2.6 0.5 A
2.2
TJ = 125°C
4A
1.8
1.4
1
0.5 1 2
5 10 20 50 100
0.6
0.1 0.2 0.5 1 2
5 10 20
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
50 100
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3 V
2.2
TJ = 25°C
1.8
1.4 VBE(sat) @ IC/IB = 250
1
VCE(sat) @ IC/IB = 250
0.6
VBE @ VCE = 3 V
0.2
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
0.2
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On Voltages
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