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MJ1000 Ver la hoja de datos (PDF) - Motorola => Freescale

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MJ1000 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
Order this document
by MJ1000/D
NPN
MJ1000
MJ1001*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎHCCECBTOTAohEmaooopXDtÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎeslllaeRllilIeeeteerlrMtmMarccecDCattttraUÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎoooieAt–unelrrrvMBrgR––LirCacaEBeeabeusRCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnmasnoertiDsAHdrsvieteVtieTtASsaneoÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVsInt2trRlNotoic5pVarlAGe_taagoaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,CtgCelSgitJoeaeTungJnEeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ ucRCntichoITStnaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCioRTrtnao=aIcCtTCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2itenSe5amgr_sisCpeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎteircatÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎureRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎangÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSSTVRJyyVVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCP,mmθIICECBTEDJbbBBsCOtooÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎgll ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJ661000ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ005ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ50M1t50.19o.5..a900ÎÎÎÎÎÎÎÎ01ÎÎÎÎÎÎÎ1+x4520ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM0J88100ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0CT0OA(1TS–ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎO2E0–143–AÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ)0A7 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎW_WUUVVVAAC_a/nndddddC_/tWccccciitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCtts ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PNP
MJ900
MJ901
COLLECTOR
NPN
MJ1000
MJ1001
COLLECTOR
BASE
BASE
4.0 k 60
4.0 k 60
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

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