MJ10005 Ver la hoja de datos (PDF) - ON Semiconductor

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MJ10005

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

ON Semiconductor 

MJ10005

TYPICAL CHARACTERISTICS

500

TJ = 150°C

300

200

25°C

100

70

50

-ā55°C

30

20

3

TJ = 25°C

2.6

IC = 5 A

10 A

15 A 20 A

2.2

1.8

10

1.4

7

VCE = 5 V

5

0.2 0.3 0.5 0.7 1

2 3 5 7 10

20

1

0.02 0.03 0.05 0.07 0.1

0.2 0.3 0.5 0.7 1

2

IC, COLLECTOR CURRENT (AMP)

IB, BASE CURRENT (AMP)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

2.4

2

IC/IB = 10

2.8

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 3 V

2.4

1.6

2

1.2

TJ = - 55°C

1.6

25°C

0.8

1.2

150°C

TJ = - 55°C

25°C

25°C

150°C

0.4

0.2 0.3 0.5 0.7 1

0.8

23

5 7 10

20

0.2 0.3 0.5 0.7 1

23

5 7 10

20

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 3. Collector–Emitter Saturation Voltage

Figure 4. Base–Emitter Voltage

104

VCE = 250 V

103

102

TJ = 125°C

100°C

101

75°C

100

10-1

-ā0.2

REVERSE

25°C

FORWARD

0

+ā0.2

+ā0.4

+ā0.6

VBE, BASEĆEMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

1000

700

TJ = 25°C

500

300

200

100

Cob

70

+ā0.8

50

0.4 0.6 1 2 4 6 10 20 40 60 100 200 400

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Output Capacitance

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3

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