MJ1000 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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componentes Descripción

Fabricante

MJ1000

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

MJ1000

MJ1001

IC=0.1A ;IB=0

VCE(sat)-1 Collector-emitter saturation voltage IC=3A; IB=12mA

VCE(sat)-2 Collector-emitter saturation voltage IC=8A; IB=40mA

VBE

Base-emitter on voltage

IC=3A ; VCE=3V

MJ1000

VCE=60V; RBE=1.0k@

TC=150

ICER

Collector cut-off current

MJ1001

VCE=80V; RBE=1.0k@

TC=150

MJ1000 VCE=30V; IB=0

ICEO

Collector cut-off current

MJ1001 VCE=40V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=3A ; VCE=3V

hFE-2

DC current gain

IC=4A ; VCE=3V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

Product Specification

MJ1000/1001

MIN TYP. MAX UNIT

60

V

80

2.0

V

4.0

V

2.5

V

1.0

5.0

mA

1.0

5.0

0.5

mA

1000

750

2.0

mA

MAX

1.94

UNIT

/W

2

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