MGF0910A Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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MGF0910A Datasheet PDF : 4 Pages
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< High-power GaAs FET (small signal gain stage) >
MGF0910A
L & S BAND / 6W
non - matched
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.) @f=2.3GHz
High power added efficiency
P.A.E =45%(TYP.) @f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For UHF Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=1.3A Rg=100 Refer to Bias Procedure
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
-15
-15
5
-15
31.5
27.3
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 :Channel-case
VDS=3V,VGS=0V
VDS=3V,ID=1.3A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.3A
f=2.3GHz
ΔVf method
Min.
-
-
-2
37
10
-
-
Limits
Typ.
-
1.5
-
38
11
45
-
Max.
5
-
-5
-
-
-
5.5
Unit
A
S
V
dBm
dB
%
C/W
Publication Date : Apr., 2011
1
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