MCT272 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
MCT272 Datasheet PDF : 9 Pages
| |||
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6.0
V
Forward current
IF
60
mA
Surge current
t < 10 µs
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
VCEO
70
V
Emitter-base breakdown voltage
7.0
V
Collector current
IC
50
mA
t < 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
Coupler
Parameter
Isolation test voltage
Test condition
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
Isolation resistance
Storage temperature
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature
Junction temperature
Soldering temperature
max. 10 s dip soldering:
distance to seating plane
≥ 1.5mm
Symbol
VISO
RIO
RIO
Tamb
Tamb
Tj
Tsld
Value
5300
≥ 7.0
≥ 7.0
≥ 0.4
175
1012
1011
- 55 to + 150
- 55 to + 100
100
260
Unit
VRMS
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83724
Rev. 1.4, 19-Apr-04
Share Link: 