MCR8DCMT4G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MCR8DCMT4G Datasheet PDF : 5 Pages
| |||
MCR8DCM, MCR8DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Available in Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
VDRM,
V
(Note 1) (TJ = −40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
600
MCR8DCM
800
MCR8DCN
On−State RMS Current
IT(RMS)
8.0
A
(180° Conduction Angles; TC = 105°C)
Average On−State Current
IT(AV)
5.1
A
(180° Conduction Angles; TC = 105°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
ITSM
I2t
80
A
26
A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TC = 105°C)
PGM
5.0
W
Forward Average Gate Power
(t = 8.3 msec, TC = 105°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, TC = 105°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ −40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM, VRRM for all types can be applied on a continuous basis. Ratings apply
for zero or negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 4
http://onsemi.com
SCRs
8 AMPERES RMS
600 − 800 VOLTS
G
A
K
4
12
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
CR
8DCxG
Y
WW
CR8DCx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR8DCM/D
Share Link: 