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MBRF10100CT(2017) Ver la hoja de datos (PDF) - HY ELECTRONIC CORP.

Número de pieza
componentes Descripción
Fabricante
MBRF10100CT
(Rev.:2017)
HY
HY ELECTRONIC CORP. HY
MBRF10100CT Datasheet PDF : 3 Pages
1 2 3
MBRF1030CT thru MBRF10100CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 100Volts
FORWARD CURRENT - 10.0 Amperes
FEATURES
Metal of silicon rectifier , majority carrier conduction
Guard ring for transient protection
Low power loss,high efficiency
High current capability,low VF
High surge capacity
Plastic package has UL flammability
classification 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
ITO-220AB
.406(10.3)
.386(9.8)
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.157(4.0)
.118(3.0)
.622(15.8)
.583(14.8)
.189(4.8)
.173(4.4)
.118(3.0)
.102(2.6)
MECHANICAL DATA
Case: ITO-220AB molded plastic
Polarity: As marked on the body
Weight: 0.08ounces,2.24 grams
.059(1.5)
.043(1.1)
.031(0.80)
.020(0.50)
.105(2.67)
.095(2.41)
.(017.81)MAX
.551(14.0)
.511(13.0)
.114(2.9)
.098(2.5)
.028(0.70)
.020(0.50)
Mounting position :Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MBRF
1030CT
30
MBRF
1040CT
40
MBRF
1050CT
50
MBRF
1060CT
60
Maximum RMS Voltage
VRMS
21
28
35
42
Maximum DC Blocking Voltage
VDC
30
40
50
60
Maximum Average Forward
I(AV)
Rectified Current ( See Fig.1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
Super Imposed on Rated Load (JEDEC Method)
Peak Forward Voltage (Note1) IF=5A @TJ=25
0.70
IF=5A @TJ=125
VF
IF=10A @TJ=25
0.57
0.80
IF=10A @TJ=125
0.70
Maximum DC Reverse Current @TJ=25
IR
at Rated DC Bolcking Voltage @TJ=125
Typical Junction Capacitance (Note2)
CJ
170
10.0
120
0.80
0.65
0.90
0.75
0.1
15
220
Typical Thermal Resistance (Note3)
RθJC
3.0
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
MBRF
1080CT
80
56
80
MBRF
10100CT
100
70
100
0.85
0.75
0.95
0.85
300
3.0
UNIT
V
V
V
A
A
V
mA
pF
/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
4.The typical data above is for reference only(典型值仅供参考).
Rev. 7, 16-Mar-2017

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