MBR10H35 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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MBR10H35 Datasheet PDF : 5 Pages
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MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
15
MBR, MBRB
10
MBRF
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
10
TJ = 150 °C
1
0.1
TJ = 125 °C
0.01
MMBBRR1100HH3355 -- MMBBRR1100HH4455
MMBBRR1100HH5500 -- MMBBRR1100HH6600
0.001
TJ = 25 °C
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
175
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
100
0
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
TJ = 150 °C
1
0.1
TJ = 25 °C
TJ = 125 °C
0.01
0
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
1
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
Document Number: 88780 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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