MBRB3030CT Ver la hoja de datos (PDF) - ON Semiconductor
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MBRB3030CT Datasheet PDF : 6 Pages
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MBRB3030CT
TYPICAL CHARACTERISTICS
30
DC
20
π (RESISTIVE LOAD)
RqJC = 1°C/W
SQUARE WAVE
IPK = 5.0 (CAPACITIVE
IAV
LOAD)
10
10
20
0
120 125 130 135 140 145 150 155
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating, Infinite Heatsink
15
DC
10 π (RESISTIVE LOAD)
RqJA = 25°C/W
SQUARE WAVE
IPK = 5.0 (CAPACITIVE
IAV
LOAD)
5
10
20
0
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating
10
RqJA = 50°C/W
TJ = 150°C
8
DC
π (RESISTIVE LOAD)
SQUARE WAVE
6
15
π (RESISTIVE LOAD)
IPK = 5.0 (CAPACITIVE
IAV
LOAD)
DC
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
10
10
4
10
20
5
SQUARE WAVE
2
20
0
0
0
50
100
150
0
5
10
15
20
25
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
1.0
SINGLE PULSE
0.1
0.01
0.1
tp
Ppk
Ppk
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
TIME equivalent square power pulse.
t1
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)]
where
DTJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
1.0
10
t, TIME (ms)
100
1000
Figure 10. Thermal Response
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