MBR40020CT Ver la hoja de datos (PDF) - Naina Semiconductor ltd.
Número de pieza
componentes Descripción
Fabricante
MBR40020CT Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
MBR40020CT thru
MBR40040CTR
Features
Silicon Schottky Diode, 400A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT
(R)
Repetitive peak
reverse voltage
VRRM
20
RMS reverse voltage VRMS
14
DC blocking voltage VDC
20
Average forward
current
IF(AV)
TC ≤ 125 oC
400
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
3000
MBR40030CT
(R)
30
21
30
400
3000
MBR40035CT
(R)
35
25
35
400
3000
MBR40040CT
(R)
40
28
40
400
3000
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT
(R)
DC forward voltage
VF
IF = 200 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR40030CT
(R)
0.68
5
200
MBR40035CT
(R)
0.68
5
200
MBR40040CT
(R)
0.68
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR40020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.35
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR40030CT
(R)
0.35
- 40 to +175
MBR40035CT
(R)
0.35
- 40 to +175
MBR40040CT
(R)
0.35
- 40 to +175
Units
oC/W
oC
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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