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MBR20100CTG(2015) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBR20100CTG
(Rev.:2015)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBR20100CTG Datasheet PDF : 4 Pages
1 2 3 4
MBR2080CTG,
MBR2090CTG,
MBR20100CTG
Switch-mode
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
2, 4
3
4
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
B20x0G
AKA
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 1
A
= Assembly Location
Y
= Year
WW = Work Week
B20x0 = Device Code
x
= 8, 9 or 10
G
= Pb−Free Device
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20100CT/D

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