TAK CHEONG ®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Figure 1. Forward Current Derating Curve (Per Diode)
20
16
12
8
4
Figure 2. Junction Capacitance (Per Diode)
1000.0
MBR20100CT
f = 1MHz
Ta = 25℃
MBR20150CT
100.0
MBR20200CT
0
0
25
50
75
100
125
150
Tc - Case Temperature [℃]
10.0
0
5
10
15
20
25
30
35
40
Reverse Voltage [V]
Figure 3. MBR20100CT Typical Reverse Current (Per Diode)
10000.000
1000.000
100.000
Ta= 150℃
Ta=125℃
10.000
Ta=75℃
1.000
0.100
Ta=25℃
0.010
0
10 20 30 40 50 60 70
VR - Reverse Voltage [V]
80 90 100
Figure 4. MBR20150CTTypical Reverse Current (Per Diode)
10000.000
1000.000
100.000
10.000
1.000
Ta= 150℃
Ta=125℃
Ta=75℃
0.100
0.010
Ta=25℃
0.001
0 15 30 45 60 75 90 105 120 135 150
VR - Reverse Voltage [V]
Figure 5. MBR20200CT Typical Reverse Current (Per Diode)
10000.000
1000.000
100.000
10.000
1.000
Ta= 150℃
Ta=125℃
Ta=75℃
0.100
0.010
Ta=25℃
0.001
0 20 40 60 80 100 120 140 160 180 200
VR - Reverse Voltage [V]
Figure 6. MBR20100CT Typical Forward Voltage (Per Diode)
100
10
Ta=150℃
1
Ta=125℃
0.1
Ta=75℃
Ta=25℃
0.01
0
0.2
0.4
0.6
0.8
1
VF - Instantaneours Forward Voltage [V]
Number: DB-028
March 2010 Release, Revision F
Page 2