MBR130T1 Ver la hoja de datos (PDF) - ON Semiconductor
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componentes Descripción
Fabricante
MBR130T1 Datasheet PDF : 4 Pages
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MBR130T1, MBR130T3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
30
V
VRWM
VR
Average Rectified Forward Current
(Rated VR) TL = 65°C
IF(AV)
A
1.0
Non−Repetitive Peak Surge Current
IFSM
5.5
A
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
−65 to +125
−65 to +125
1000
°C
°C
V/ms
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
230
°C/W
Thermal Resistance, Junction to Lead (Note 1)
RθJL
108
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A, TJ = 25°C)
(IF = 0.7 A, TJ = 25°C)
(IF = 1.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(VR = 5 V, TC = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
Symbol
Typ
Max
Unit
VF
V
−
0.35
−
0.45
0.47
−
IR
mA
60
10
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