MBM29LV160B-12PCV Ver la hoja de datos (PDF) - Spansion Inc.

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MBM29LV160B-12PCV

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Spansion Inc. 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20846-6E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT

MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12

s GENERAL DESCRIPTION

The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages.

The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and

5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM

programmers.

The standard MBM29LV160T/B offers access times of 80 ns and 120 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29LV160T/B is pin and command set compatible with JEDEC standard E2PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160T/B is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

s PRODUCT LINE UP

(Continued)

Part No.

Ordering Part No.

VCC

=

3.3

V

+0.3 V

–0.3 V

VCC

=

3.0

V

+0.6 V

–0.3 V

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29LV160T/160B

-80

—

—

—

-90

-12

80

90

120

80

90

120

30

35

50

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