MBM29LV008BA Ver la hoja de datos (PDF) - Spansion Inc.

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MBM29LV008BA

FLASH MEMORY CMOS 8M (1M × 8) BIT

Spansion Inc. 

MBM29LV008TA/BA-70/90

s FEATURES

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

40-pin TSOP(1) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)

• Minimum 100,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector protection command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin

Note : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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