MBD110DWT1(2001) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MBD110DWT1 Datasheet PDF : 8 Pages
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MBD110DWT1 MBD330DWT1 MBD770DWT1
2.0
MBD770DWT1
1.6
1.2
TYPICAL CHARACTERISTICS
MBD770DWT1
f = 1.0 MHz
500
MBD770DWT1
400
KRAKAUER METHOD
300
0.8
200
0.4
100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 11. Minority Carrier Lifetime
10
MBD770DWT1
1.0
TA = 100°C
TA = 75°C
0.1
0.01
TA = 25°C
100
MBD770DWT1
10
TA = 85°C
TA = -ā40°C
1.0
TA = 25°C
0.001
0
0.1
10
20
30
40
50
0.2 0.4
0.8
1.2
1.6
2.0
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
Figure 13. Forward Voltage
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