MBD110DWT1(2001) Ver la hoja de datos (PDF) - ON Semiconductor
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MBD110DWT1 Datasheet PDF : 8 Pages
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD110DWT1
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
0.02
MBD110DWT1
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
100
10
TA = 85°C
TA = -ā40°C
1.0
0.1
0.3
TA = 25°C
MBD110DWT1
0.4
0.5
0.6
0.7
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9
(Test Circuit Figure 5)
0.9
8
7
0.8
6
5
4
0.7
3
MBD110DWT1
2
MBD110DWT1
0.6
1
0
1.0
2.0
3.0
4.0
0.1 0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
LOCAL
OSCILLATOR
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equiva-
lent).
Note 2 – Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 – LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
http://onsemi.com
3
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