MAX9945 Ver la hoja de datos (PDF) - Maxim Integrated
Número de pieza
componentes Descripción
Fabricante
MAX9945 Datasheet PDF : 14 Pages
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38V, Low-Noise, MOS-Input,
Low-Power Op Amp
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +15V, VEE = -15V, VIN+ = VIN- = VGND = 0V, ROUT = 100kΩ to GND, TA = -40°C to +125°C, typical values are at TA = +25°C,
unless otherwise noted.) (Note 2)
PARAMETER
Output Voltage Low
SYMBOL
CONDITIONS
ROUT = 10kΩ to GND TA = TMIN to TMAX
VOL
ROUT = 100kΩ to
GND
TA = TMIN to TMAX
MIN TYP MAX UNITS
VEE + VEE +
0.26 0.45
V
VEE + VEE +
0.05 0.15
Output Voltage High
ROUT = 10kΩ to GND TA = TMIN to TMAX
VCC - VCC -
0.45 0.24
VOH
V
ROUT = 100kΩ to
GND
TA = TMIN to TMAX
VCC - VCC -
0.15 0.03
AC ELECTRICAL CHARACTERISTICS
Input Current-Noise Density
IN
Input Voltage Noise
VNP-P
Input Voltage-Noise Density
VN
Gain Bandwidth
GBW
f = 1kHz
f = 0.1Hz to 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
1
2
25
16.5
15
3
fA/√Hz
µVP-P
nV/√Hz
MHz
Slew Rate
SR
2.2
V/µs
Capacitive Loading (Note 4)
CLOAD No sustained oscillations
120
pF
Total Harmonic Distortion
THD
VOUT = 4.5VP-P, AV = 1V/V,
f = 10kHz, ROUT = 10kΩ to GND
97
dB
POWER-SUPPLY ELECTRICAL CHARACTERISTICS
Power-Supply Voltage Range
Power-Supply Rejection Ratio
Quiescent Supply Current
VCC - VEE
PSRR
ICC
Guaranteed by PSRR, VEE = 0V
VCC - VEE = +4.75V to +38V
TA = +25°C
TA = TMIN to TMAX
+4.75
+38
V
82
100
dB
400
700
µA
850
Note 2: All devices are 100% production tested at TA = +25°C. All temperature limits are guaranteed by design.
Note 3: Guaranteed by design. IN+ and IN- are internally connected to the gates of CMOS transistors. CMOS GATE leakage is so
small that it is impractical to test in production. Devices are screened during production testing to eliminate defective units.
Note 4: Specified over all temperatures and process variation by circuit simulation.
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