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M63812FP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M63812FP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q Four package configurations (P, FP, GP and KP)
q Medium breakdown voltage (BVCEO35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q With zener diodes
q Low output saturation voltage
q Wide operating temperature range (Ta=–40 to +85°C)
PIN CONFIGURATION
INPUT
IN11
IN22
IN33
IN44
IN55
IN66
IN77
GND 8
16 O1
15 O2
14 O3
13 O4 OUTPUT
12 O5
11 O6
10 O7
9 COM COMMOM
Package type
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spike-
killer clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow syn-
chronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
INPUT
Vz=7V
10.5k
10k
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63812P
M63812FP
M63812GP
M63812KP
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000

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