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Número de pieza
componentes Descripción
NTE213 Ver la hoja de datos (PDF) - NTE Electronics
Número de pieza
componentes Descripción
Fabricante
NTE213
Germanium PNP Transistor High Power, High Gain Amplifier
NTE Electronics
NTE213 Datasheet PDF : 2 Pages
1
2
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector
–
Emitter Saturation Voltage
Base
–
Emitter ON Voltage
Dynamic Characteristics
h
FE
V
CE(sat)
V
BE(on)
V
CB
= 2V, I
C
= 5A
V
CB
= 2V, I
C
= 15A
V
CB
= 2V, I
C
= 25A
I
C
= 5A, I
B
= 500mA
I
C
= 25A, I
B
= 2A
I
C
= 5A, I
B
= 500mA
I
C
= 25A, I
B
= 2A
50 75 100
25 47
–
15 38
–
–
0.06 0.1 V
–
0.2 0.3 V
–
0.65 1.0 V
–
1.0 2.0 V
Common
–
Emitter Cutoff Frequency
f
α
e V
CE
= 6V, I
C
= 5A
2.0 2.7
–
kHz
1.250 (31.75
Dia Max
1.005 (25.55)
Dia Max
.500
(12.7)
Max
.520 (13.2)
Max
.710
(18.03)
Max
Emitter
.312 (7.93)
10
–
32 UNF
–
2A
.190 (4.83)
.345 (8.76)
Base
Collector/Case
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