BC856B Ver la hoja de datos (PDF) - ON Semiconductor
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BC856B Datasheet PDF : 6 Pages
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BC856B, BC857B, BC858A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CEO
−65
−45
−30
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856
BC857
BC858
V(BR)CES
−80
−50
−30
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CBO
−80
−50
−30
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856
BC857
BC858
V(BR)EBO
−5.0
−5.0
−5.0
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
hFE
−
−
−
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
125
220
420
−
−
−
−
−0.6
−
fT
100
Cob
−
NF
−
Typ
Max
Unit
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−15
nA
−
−4.0
mA
90
−
−
150
−
270
−
180
250
290
475
520
800
V
−
−0.3
−
−0.65
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
dB
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