SMMBT2222ALT1G Ver la hoja de datos (PDF) - ON Semiconductor
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SMMBT2222ALT1G Datasheet PDF : 7 Pages
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MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
SMALL− SIGNAL CHARACTERISTICS
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A, SMMBT2222A
Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
hoe
rb, Cc
NF
mmhos
5.0
35
25
200
ps
−
150
dB
−
4.0
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
td
IC = 150 mAdc, IB1 = 15 mAdc)
tr
−
10
ns
−
25
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
ns
tf
−
60
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
+16 V
0
- 2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
< 2 ns
+ 30 V
200
CS* < 10 pF
+16 V
0
-14 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
< 20 ns
1k
1N914
+ 30 V
200
CS* < 10 pF
Scope rise time < 4 ns
- 4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
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