CA3018 Ver la hoja de datos (PDF) - Harris Semiconductor
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CA3018 Datasheet PDF : 6 Pages
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CA3018, CA3018A
Absolute Maximum Ratings
CA3018
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1) . . 20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . 50mA
CA3018A
15V
30V
40V
5V
50mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
Metal Can Package . . . . . . . . . . . . . . . 200
120
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .175oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC
CA3018
CA3018A
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
DC CHARACTERISTICS
Collector Cutoff Current (Figure 1)
Collector Cutoff Current (Figure 2)
ICBO
ICEO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
- 0.002 100
- 0.002 40
nA
-
See
5
Fig. 2
-
See 0.5
µA
Fig. 2
Collector Cutoff Current Darlington Pair
Collector-to-Emitter Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Forward Current Transfer Ratio (Note 3)
(Figure 3)
Magnitude of Static-Beta Ratio (Isolated
Transistors Q1 and Q2) (Figure 3)
Forward Current Transfer Ratio Darling-
ton Pair (Q3 and Q4) (Figure 4)
Base-to-Emitter Voltage (Figure 5)
Input Offset Voltage (Figures 5, 7)
ICEOD
VCE = 10V, IB = 0
-
-
-
-
-
5
µA
V(BR)CEO IC = 1mA, IB = 0
15
24
-
15
24
-
V
V(BR)CBO IC = 10µA, IE = 0
20
60
-
30
60
-
V
V(BR)EBO IE = 10µA, IC = 0
5
7
-
5
7
-
V
V(BR)CIO IC = 10µA, ICI = 0
20
60
-
40
60
-
V
VCES
IB = 1mA, IC = 10mA
-
0.23
-
-
0.23 0.5
V
hFE
VCE = 3V IC = 10mA
-
100
-
50 100
-
-
IC = 1mA
30 100 200 60 100 200
-
IC = 10µA
-
54
-
30
54
-
-
VCE = 3V,
IC1 = IC2 = 1mA
0.9 0.97
-
0.9 0.97
-
-
hFED
VCE = 3V IC = 1mA 1500 5400
-
2000 5400
-
-
IC = 100µA -
-
- 1000 2800 -
-
VBE
VCE = 3V IE = 1mA
- 0.715 - 0.600 0.715 0.800 V
IE = 10mA
- 0.800 -
- 0.800 0.900 V
VBE1
–VBE2
VCE = 3V, IE = 1mA
-
0.48
5
-
0.48
2
mV
Temperature Coefficient: Base-to-Emitter
Voltage Q1, Q2 (Figure 6)
--∆----∆V----TB----E----
VCE = 3V, IE = 1mA
-
-1.9
-
-
-1.9
- mV/oC
2
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