IXGH25N100A Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH25N100A Datasheet PDF : 4 Pages
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Symbol
g
fs
Cies
C
oes
Cres
Qg
Qge
Qgc
td(on)
t
ri
td(off)
tfi
E
off
t
d(on)
tri
Eon
td(off)
t
fi
E
off
RthJC
R
thCK
Test Conditions
IXGH 25N100 IXGM 25N100
IXGH 25N100A IXGM 25N100A
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
TO-247 AD Outline
I = I ; V = 10 V,
8 15
S
C
C90 CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
2750
pF
200
pF
50
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25N100A
25N100A
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25N100
25N100A
25N100
25N100A
130 180 nC
25 60 nC
55 90 nC
100
ns
200
ns
500
ns
500
ns
5
mJ
100
ns
250
ns
3.5
mJ
720 1000 ns
950 3000 ns
800 1500 ns
10
mJ
8
mJ
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
0.62 K/W
0.25
K/W
TO-204AE Outline
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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