2N2905 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
2N2905 Datasheet PDF : 5 Pages
| |||
2N2905/2N2907
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
M ax
Max
TO-39
58.3
292
TO -18
97.3
437.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
VCB = -50 V
Tc ase = 150 oC
ICEX Collect or Cut-off
Current (VBE = -0.5V)
IBEX Base Cut-off Current
(VBE = -0.5V)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO ∗ Emitt er-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCE = -30 V
VCE = -30 V
IC = -10 µA
IC = -10 mA
IE = -10 µA
IC = -150 mA
IC = -500 mA
IB = -15 mA
IB = -50 mA
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFE∗ DC Current G ain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -150 mA
IC = -500 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT
CEBO
Transition F requency
Emitter Base
Capacitance
VCE = -20 V f = 100 MHz
IC = -50 mA
IC = 0 VEB = -2 V f = 1MHz
CCBO
Collector Base
Capacitance
IE = 0 VCB = -10 V f = 1MHz
td
Delay Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
tr
Rise Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
ts
Storage Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
tf
Fall Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Min. Typ.
-60
-40
-5
35
50
75
100
30
200
M a x.
-20
-20
-50
-50
-0.4
-1.6
-1.3
-2.6
300
30
8
10
40
80
30
Unit
nA
µA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
2/5
Share Link: 