2N3700 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
2N3700 Datasheet PDF : 7 Pages
| |||
2N3700
2 Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE = 0)
VCB = 90V
VCB = 90V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100µA
V(BR)CEO(1)
Collector-emitter
voltage (IB = 0)
breakdown
IC = 30mA
V(BR)EBO
Emitter-base breakdown voltage
(IC = 0)
IE = 100µA
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 150mA
IC = 0.5A
VBE(sat) (1) Base-emitter saturation voltage IC = 150mA
hFE DC current gain
IC = 0.1mA
IC = 10mA
IC = 150mA
IC = 500mA
IC = 1A
IC = 150mA
Tamb = -55°C
hfe Small signal current gain
IC = 1mA
f = 1kHz
fT
Transition frequency
IC = 50mA
f = 20MHz
CEBO Emitter-base capacitance
IC = 0
f = 1MHz
CCBO Collector-base capacitance
IE = 0
f = 1MHz
rbb’ Cb’c Feedback time constant
IC = 10mA
f = 4MHz
Tamb = 150°C
IB = 15mA
IB = 50mA
IB = 15mA
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 5V
VCE = 10V
VEB = 0.5V
VCB = 10V
VCB = 10V
Min.
140
80
7
50
90
100
50
15
40
80
25
Note: (1) Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Typ.
100
60
12
Max.
10
10
10
0.2
0.5
1.1
300
400
400
Unit
nA
µA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
3/7
Share Link: 