KSY44 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

KSY44

Hall Sensor

Siemens AG 

KSY 44

Maximum Ratings

Parameter

Operating temperature

Storage temperature

Supply current

Thermal conductivity

soldered, in air

Symbol

TA

Tstg

I1

GthA

GthC

Characteristics (TA = 25 °C)

Nominal supply current

Open-circuit sensitivity

Open-circuit Hall voltage

I1 = I1N, B = 0.1 T

Ohmic offset voltage

I1 = I1N, B = 0 T

Linearity of Hall voltage

B = 0…0.5 T

B = 0…1.0 T

Input resistance

B=0 T

Output resistance

B=0 T

Temperature coefficient of the

open-circuit Hall voltage

I1 = I1N, B = 0.1 T

Temperature coefficient of the internal

resistance, B = 0 T

Temperature coefficient of ohmic offset

voltage, I1 = I1N, B = 0 T

Inductive zero component, I1N = 0

Switch-on drift of the ohmic offset

voltage I1 = I1N, B = 0 T

Noise figure

I1N

KB0

V20

VR0

FL

R10

R20

TCV20

TCR10, R20

TCVR0

A 1)

2

dV02)

∆V03)

F

Value

– 40…+ 175

– 50…+ 180

10

≥ 1.5

≥ 2.2

7

150…265

105…185

≤ ± 15

≤ ± 0.2

≤ ± 0.7

600…900

1000…1500

∼ – 0.03

∼ + 0.3

∼ – 0.3

0.16

≤ 0.3

≤ 0.1

∼ 10

Unit

°C

°C

mA

mW/K

mW/K

mA

V/AT

mV

mV

%

%

Ω

Ω

%/K

%/K

%/K

cm2

mV

mV

dB

1) With time varying induction there exists an inductive voltage Vind between the Hall voltage terminals (supply

current I1 = 0):

Vind = A2 × dB/dt

×

10-4

with

V(V),

A2

(cm2),

B(T),

t(s)

2) dV0 = V0(t = 1s) – V0(t = 0.1 s)

3) ∆V0 = V0(t = 3m) – V0(t = 1 s)

Semiconductor Group

2

1998-11-13

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