DATA SHEET
SEMICONDUCTOR
KBJ6005G THRU KBJ610G
6.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
H
•Surge Overload Rating to 170A Peak
•Ideal for Printed Circuit Board Applications
C
•Plastic Material - UL Flammability
Classification 94V-0
•UL Listed Under Recognized Component Index,
File Number E94661
E
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
•Case: Molded Plastic
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Approx. Weight: 4.6 grams
•Marking: Type Number
KBJ( mm)
A
_
BL
K
J
D
G
P
N
M
R
KBJ
Dim
Min
Max
A
24.80 25.20
B
14.70 15.30
C
400 Nominal
D
17.20 17.80
E
0.90 1.10
G
7.30 7.70
H
3.10ψ 3.40ψ
J
3.30 3.70
K
1.90 2.10
L
9.30 9.70
M
2.50 2.90
N
3.40 3.80
P
4.40 4.80
R
0.60 0.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
KBJ KBJ
Symbol
6005G 601G
KBJ KBJ
602G 604G
KBJ
606G
KBJ
608G
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM 50
100 200 400 600 800
DC Blocking Voltage
VR
RMS Reverse Voltage
Average Rectified Output Current @ TC = 100°C
VR(RMS) 35
IO
70
140 280 420 560
6.0
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
170
(JEDEC method)
Forward Voltage per element @ IF = 6.0A
VFM
1.0
Peak Reverse Current @TC = 25°C
5.0
at Rated DC Blocking Voltage @ TC = 125°C
IRM
500
I2t Rating for Fusing (t < 8.3ms) (Note 3)
I2t
120
Typical Junction Capacitance per Element (Note 1)
CJ
80
Typical Thermal Resistance (Note 2)
RθJA
1.5
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
3. Non-repetitive, for t > 1ms and < 8.3ms.
KBJ
Unit
610G
1000
V
700
V
A
A
V
μA
A2s
PF
℃/W
℃
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1
REV.02 20120305