JANSF2N7389 Ver la hoja de datos (PDF) - International Rectifier

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JANSF2N7389

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

International Rectifier 

Pre-Irradiation

IRHF9130

2000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

1500

 Ciss

1000

500

0

1

C oss

C rss

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = -6.5

16

12

 VDS =-80V

VDS =-50V

VDS =-20V

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

10

20

30

40

50

60

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

 TJ = 150° C

1

 TJ = 25°C

0.1

0.2

 VGS = 0 V

1.0

1.8

2.6

3.4

4.2

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

100

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

 100us

10

 1ms

 TC= 25°C

TJ = 150 ° C

Single Pulse

1

1

10

 10ms

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

5

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