SGM2016AN Ver la hoja de datos (PDF) - Sony Semiconductor
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SGM2016AN Datasheet PDF : 5 Pages
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SGM2016AN
GaAs N-channel Dual-Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2016AN is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
M-281
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
VDSX
12
V
• Gate 1 to source voltage VG1S
–5
V
• Gate 2 to source voltage VG2S
–5
V
• Drain current
ID
55
mA
• Allowable power dissipation PD
100
mW
• Channel temperature
Tch
125
°C
• Storage temperature
Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97939-PS
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