IXTH6N80A Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH6N80A Datasheet PDF : 4 Pages
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IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
Fig.7 Gate Charge Characteristic Curve
10
9 VDS = 500V
8 ID = 3.0A
IG = 10mA
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
Ciss
f = 1 MHz
VDS = 25V
Coss
Crss
5
10
15
20
25
VCE - Volts
Fig.8 Forward Bias Safe Operating Area
10 Limited by RDS(on)
10us
100us
1ms
1
10ms
100ms
0.1
1
10
100
VDS - Volts
1000
Fig.10 Source Current vs. Source
to Drain Voltage
9
8
7
6
5
4
TJ = 125°C
3
TJ = 25°C
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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