IXTM6N80A Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXTM6N80A

Standard Power MOSFET

IXYS CORPORATION 

IXTH 6N80

IXTM 6N80

IXTH 6N80A

IXTM 6N80A

Fig. 1 Output Characteristics

9

8

TJ = 25°C

7

6

5

4

3

2

1

0

0

5

10

VGS = 10V

15 20

VDS - Volts

7V

6V

25 30

Fig. 3 RDS(on) vs. Drain Current

3.0

TJ = 25°C

2.8

2.6

2.4

VGS = 10V

2.2

2.0

VGS = 15V

1.8

0

2

4

6

8

10

ID - Amperes

Fig. 5 Drain Current vs.

Case Temperature

7

6

6N80A

5

4

6N80

3

2

1

0

-50 -25 0 25 50 75 100 125 150

TC - Degrees C

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700 Fax: 408-496-0670

Fig. 2 Input Admittance

9

8

7

6

5

TJ = 25°C

4

3

2

1

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

VGS - Volts

Fig. 4 Temperature Dependence

of Drain to Source Resistance

2.50

2.25

2.00

1.75

1.50

1.25

ID = 2.5A

1.00

0.75

0.50

-50 -25 0 25 50 75 100 125 150

TJ - Degrees C

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

1.2

BV CES

1.1

VGS(th)

1.0

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 50 75 100 125 150

TJ - Degrees C

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

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