IXGX50N60C2D1 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXGX50N60C2D1

HiPerFAST™ IGBT with Diode

IXYS CORPORATION 

IXGK 50N60C2D1

IXGX 50N60C2D1

160

A

140

IF 120

100

80

60

TVJ= 25°C

TVJ=100°C

TVJ=150°C

40

20

0

0

1

2V

VF

Fig. 17. Forward current IF versus VF

2.0

1.5

Kf

1.0

IRM

0.5

Qr

4000 TVJ= 100°C

nC VR = 300V

3000

Qr

2000

IIFF==16200AA

IF= 30A

1000

0

100

A/µs 1000

-diF/dt

Fig. 18. Reverse recovery charge Qr

versus -diF/dt

140

ns

130

trr

120

110

TVVRJ==

100°C

300V

IF=120A

IF= 60A

IF= 30A

100

90

0.0

0

40

80 120 °C 160

TVJ

Fig. 20. Dynamic parameters Qr, IRM

versus TVJ

1

K/W

0.1

ZthJC

0.01

80

0 200 400 600 A8/0µ0s 1000

-diF/dt

Fig. 21. Recovery time trr versus -diF/dt

80

TVJ= 100°C

A VR = 300V

60

IRM

40

IF=120A

IIFF==

60A

30A

20

0

0 200 400 600 A8/0µ0s 1000

-diF/dt

Fig. 19. Peak reverse current IRM

versus -diF/dt

20

1.6

V

VFR

15

tfr

µs

tfr

1.2

VFR

10

0.8

5

0.4

TVJ= 100°C

IF = 60A

0

0.0

0 200 400 600 A80/µ0s 1000

diF/dt

Fig. 22. Peak forward voltage VFR and

tfr versus diF/dt

Constants for ZthJC calculation:

i

Rthi (K/W)

ti (s)

1

0.324

2

0.125

3

0.201

0.0052

0.0003

0.0385

Note: Fig. 2 through Fig. 6 show typical

values

0.001

0.0001

0.00001

0.0001

0.001

0.01

Fig. 23. Transient thermal resistance junction to case

0.1

DSEP 60-06A

s

1

t

IXYS reserves the right to change limits, test conditions, and dimensions.

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