IXGK50N60AU1 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXGK50N60AU1

HiPerFAST™ IGBT with Diode Combi Pack

IXYS CORPORATION 

IXGK 50N60AU1

Fig.7 Gate Charge

15

IC = 40A

VCE = 500V

12

9

6

3

Fig.8 Turn-Off Safe Operating Area

100

10

TJ = 125°C

dV/dt < 3V/ns

1

0.1

0

0

50 100 150 200 250

Total Gate Charge - (nC)

Fig.9 Capacitance Curves

4500

4000

Cies

3500

3000

2500

2000

1500

1000

500

Cres

Coes

0

0

5

10

15

20

25

VCE - Volts

0.01

0

100 200 300 400 500 600 700

VCE - Volts

= IXGK 50N60AU1

Fig.10 Transient Thermal Impedance

1

D=0.5

0.1 D=0.2

D=0.1

D=0.05

D=0.02

0.01 D=0.01

D = Duty Cycle

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

Pulse Width - seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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