IXGK50N60AU1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGK50N60AU1 Datasheet PDF : 6 Pages
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IXGK 50N60AU1
Symbol
gfs
Qg
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
t
d(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
25 35
S
200
nC
50
nC
80
nC
50
ns
210
ns
200
ns
275 400 ns
4.8
mJ
50
ns
240
ns
3
mJ
280
ns
600
ns
9.6
mJ
0.42 K/W
0.15
K/W
TO-264 AA Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
I
RM
trr
RthJC
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.7 V
I
F
=
I,
C90
V
GE
=
0
V,
-di /dt
F
=
480
A/µs
19
VR = 360 V
TJ = 125°C 175
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C 35
33 A
ns
50 ns
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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