SIHFR1N60AT(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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SIHFR1N60AT Datasheet PDF : 8 Pages
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS
10
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
TJ = 150° C
0.1
4.5V
1
TJ = 25°C
0.01
0.1
20μs PULSE WIDTH
TJ= 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V DS= 100V
20μs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20μs PULSE WIDTH
TJ= 150 °C
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 ID = 1.4A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91267
S-81367-Rev. A, 21-Jul-08
www.vishay.com
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